Semiconductor device

ABSTRACT

A semiconductor device includes a die pad, and a first lead integrally connected to the die pad. A second lead and a third lead are arranged laterally away from the first lead. A semiconductor element including a first lateral surface and a second lateral surface adjacent to each other and a third lateral surface located opposite to the first lateral surface and adjacent to the second lateral surface, is mounted on the die pad. A plurality of first conductive members electrically connects the at least part of a main electrode pad to the end on the die pad side of the second lead. A second conductive member connects a control electrode pad to the end on the die pad side of the third lead.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device.

The present application is based on and claims priority to JapanesePatent Application No. 2016-139448 filed on Jul. 14, 2016, the entirecontents of which are herein incorporated by reference.

BACKGROUND ART

A device including a die pad as a support substrate, a semiconductorelement, a first lead, a second lead, and a third lead is known as asemiconductor device. In such a semiconductor device, the first lead isintegrally connected to the die pad, and the second lead and the thirdlead are arranged laterally away from the first lead so that the firstlead is interposed between the second lead and the third lead. Thesemiconductor element is mounted on the die pad so as to be electricallyconnected to the die pad. A main electrode pad of the semiconductorelement (for example, a source electrode pad or an emitter electrodepad) is connected to the second lead by way of a plurality of firstconductive members (for example, wires), and a control pad of thesemiconductor element (a gate electrode pad) is connected to the thirdlead by way of a second conductive member (for example, a wire).

Patent Document 1: Japanese Laid-Open Patent Application Publication No.2005-26294

Patent Document 2: U.S. Pat. No. 7,791,182 specification

SUMMARY OF THE INVENTION

A semiconductor substrate according to an embodiment of the presentdisclosure includes a die pad, and a first lead integrally connected tothe die pad. A second lead is arranged laterally away from the firstlead and provided apart from the die pad and the first lead. A thirdlead is arranged laterally away from the first lead and provided apartfrom the die pad, the first lead and the second lead. A semiconductorelement including a first lateral surface and a second lateral surfaceadjacent to each other, and a third lateral surface located opposite tothe first lateral surface and adjacent to the second lateral surface ismounted on the die pad such that the first lateral surface faces an endon the die pad side of the second lead and such that the second lateralsurface faces an end on the die pad side of the third lead in a planarview. A main electrode pad is provided on a surface opposite to the diepad of the semiconductor element such that at least part of the mainelectrode pad is located on the first lateral surface side. A controlelectrode pad is provided on the surface opposite to the die pad of thesemiconductor element such that at least part of the control electrodepad is located on the third lateral surface side. A plurality of firstconductive members electrically connects the at least part of the mainelectrode pad to the end on the die pad side of the second lead. Asecond conductive member connects the control electrode pad to the endon the die pad side of the third lead.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically illustrating a semiconductor deviceaccording to a first embodiment; and

FIG. 2 is a plan view schematically illustrating a semiconductor deviceaccording to a second embodiment.

MODE OF CARRYING OUT THE INVENTION Description of Embodiments of thePresent Disclosure

Like semiconductor devices described in Patent Documents 1 and 2, in aform of connecting a main pad of a semiconductor element (for example, asource electrode pad or an emitter electrode pad) to leads provided in asemiconductor device with a plurality of first conductive members,current density in the semiconductor element sometimes becomes uneven.

Therefore, the present disclosure aims at providing a semiconductordevice that can make current density in a semiconductor element uniform.

Embodiments of the present disclosure are described below with referenceto the drawings. In the description of the drawings, same numerals areattached to the same components, and an overlapping description isomitted.

Description of Embodiments of the Present Disclosure

To begin with, embodiments of the present disclosure are listed anddescribed below.

A semiconductor device according to one embodiment includes a die pad, afirst lead integrally connected to the die pad, a second lead arrangedlaterally away from the first lead and provided apart from the die padand the first lead, a third lead arranged laterally away from the firstlead and provided apart from the die pad, the first lead and the secondlead, a semiconductor element including a first lateral surface and asecond lateral surface adjacent to each other and a third lateralsurface located opposite to the first lateral surface and adjacent tothe second lateral surface, and mounted on the die pad such that thefirst lateral surface faces an end on the die pad side of the secondlead and that the second lateral surface faces an end on the die padside of the third lead in a planar view, a main electrode pad providedon a surface opposite to the die pad of the semiconductor element suchthat at least part of the main electrode pad is located on the firstlateral surface side, a control electrode pad provided on the surfaceopposite to the die pad of the semiconductor element such that at leastpart of the control electrode pad is located on the third lateralsurface side, a plurality of first conductive members electricallyconnecting the at least part of the main electrode pad to the end on thedie pad side of the second lead, and a second conductive memberconnecting the control electrode pad to the end on the die pad side ofthe third lead.

In the above configuration, the semiconductor element is arranged on thedie pad side so that a first lateral surface of the semiconductorelement faces an end part on the die pad side of the second lead, and atleast one part of the main electrode pad is located on the first lateralsurface side. Hence, because at least one part of the main electrode padcan be linearly connected to the end part on the die pad of the secondlead with the plurality of first conductive members, and because theplurality of first conductive members can be arranged parallel to eachother when seen from above or below in a thickness direction of the diepad, the plurality of first conductive members can be arranged evenly.In this case, a current is likely to be uniformly supplied to the maincurrent pad, and uniform current density is achieved in thesemiconductor element.

In one embodiment, the end part on the die pad side of the second leadmay be linearly connected to the main electrode pad with the pluralityof first conductive members in a planar view, and the plurality of firstconductive members may be arranged parallel to each other.

In one embodiment, an extending direction of each of the plurality offirst conductive members may cross an extending direction of the secondconductive member at right angles.

In one embodiment, the third lead may be arranged opposite to the secondlead with respect to the first lead, and facing surfaces that a firstfacing part facing the end on the die pad side of the second lead in thedie pad includes and that the end on the die pad side of the second leadincludes may be parallel to each other. Hence, the current density inthe semiconductor element can be made more uniform.

In one embodiment, facing surfaces that a second facing part facing theend on the die pad side of the third lead in the die pad includes andthat the end on the die pad side of the third lead includes are parallelto each other. In this case, inductance can be decreased because the endpart on the die pad side of the third lead can be connected to thecontrol electrode pad with a shorter second conductive member.

In one embodiment, the first lateral surface is parallel to the facingsurface included in the first facing part. In this case, the pluralityof first conductive members is readily arranged evenly.

In one embodiment, at least part of the main electrode pad is formedinto a rectangular shape extending from the third lateral surface to thefourth lateral surface.

Details of Embodiments of the Present Invention

Specific examples of embodiments of the present disclosure are describedbelow with reference to the drawings. The present disclosure is notlimited to these illustrations, but is indicated by a scope of claims,and is intended to contain the scope of claims and its equivalents, andthe all changes in the scope. The same numerals are attached to the samecomponents in a description of the drawings and an overlappingdescription is omitted. A proportion of size in the drawings does notnecessarily coincide with that of the description.

First Embodiment

FIG. 1 is a plan view schematically illustrating a semiconductor deviceaccording to a first embodiment. The semiconductor device 10 illustratedin FIG. 1 is a resin-sealing type semiconductor device. Thesemiconductor device 10 includes a die pad 12, a semiconductor chip(semiconductor element) 14, a first lead 16, a second lead 18 and athird lead 20. The die pad 12, the first lead 16, the second lead 18 andthe third lead 20 can form a lead frame.

The semiconductor device 10 is, for example, a power semiconductordevice used in a power source and the like. An example of a packagingform of the semiconductor device 10 may be a commonly used TO(Transistor Outline) series. Examples of the TO series include TO-247,TO-220, TO-263 (D2-PAK), TO-252 (D-PAK).

The die pad 12 is a mounting substrate including a chip mounting surface12 a on which the semiconductor chip 14 is mounted. The die pad 12 canbe electrically connected to the semiconductor chip 14. The die pad 12forms, for example, a plate shape. An example of a shape of the chipmounting surface 12 a is approximately rectangular. Examples of amaterial of the die pad 12 include a copper (Cu) and a metal such as acopper alloy. A through hole 22 that penetrates though the die pad 12 ina thickness direction can be formed in the die pad 12. The though hole22 is a hole to let the screw through when the semiconductor device 10is fixed to another member, for example, by the screw.

The semiconductor chip 14 is mounted on a predetermined position of thechip mounting surface 12 a. The semiconductor chip 14 is a transistor.Examples of the transistor include a bipolar transistor, a MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor), an insulating gatebipolar transistor (IGBT: Insulated Gate Bipolar Transistor) and thelike. The semiconductor chip 14 can be mounted on the chip mountingsurface 12 a via an adhesive layer that is composed of a materialcontaining a lead-containing metal solder, lead-free metal solder, amaterial-containing conductive resin or the like.

Examples of the semiconductor chip 14 include a wide bandgapsemiconductor, silicon and the like. The wide bandgap semiconductor hasa bandgap that is greater than a bandgap of silicon. Examples of thewide bandgap semiconductor include silicon carbide (SiC), galliumnitride (GaN), diamond and the like.

The semiconductor chip 14 includes a first lateral surface 14 a, asecond lateral surface 14 b, a third lateral surface 14 c, and a fourthlateral surface 14 d. The second lateral surface 14 b intersects withthe first lateral surface 14 a. In other words, the first lateralsurface 14 a and the second lateral surface 14 b are adjacent to eachother, and arranged closely. The third lateral surface 14 c is locatedopposite to the first lateral surface 14 a, and intersects with thesecond lateral surface 14 b. In other words, the second lateral surface14 b and the third lateral surface 14 c are adjacent to each other, andarranged closely. The fourth lateral surface 14 d is located opposite tothe second lateral surface 14 b, and intersects with the first lateralsurface 14 a and the third lateral surface 14 c. In other words, thefourth lateral surface 14 d and the first lateral surface 14 a areadjacent to each other, and are arranged closely. When seen from thethickness direction of the semiconductor chip 14, which means in aplanar view, the shape of the semiconductor chip 14 is, for example, arectangle or a square shape.

The semiconductor chip 14 includes a gate electrode pad (controlelectrode pad) GP and an electrode pad (main electrode pad) SP. When thesemiconductor chip 14 is a MOSFET, the electrode pad SP corresponds to asource electrode pad. When the semiconductor chip 14 is an IGBT, theelectrode pad SP corresponds to an emitter electrode pad. An additionalelectrode pad such as a drain electrode pad and a collector electrodepad can be formed on the entire back surface of the semiconductor chip14. When the electrode pad SP is referred to as a first main electrodepad, the electrode pad formed on the entire back surface of thesemiconductor chip 14 is a second main electrode pad. A conductive statebetween the first main electrode pad and the second main electrode padin the semiconductor chip 14 can be controlled.

The gate electrode pad GP and the electrode pad SP are provided on anupper part (opposite side of the die pad 12) of the semiconductor chip14. The electrode pad SP and the gate electrode pad GP are regions towhich respective ends of the plurality of first conductive members 24and second conductive members 26 described later are connected.

Shapes of the electrode pad SP and the gate electrode pad GP can beformed into a rectangular shape as illustrated in FIG. 1. When the shapeof the electrode pad SP is rectangular, the electrode pad SP can bearranged so that a lengthwise direction of the electrode pad SP isorthogonal to a normal direction of the first lateral surface 14 a. Thegate electrode pad GP is arranged similarly. Hereinafter, withoutspecific remarks, the shapes of the electrode pad SP and the gateelectrode pad GP are rectangular. Normally, an area of the electrode padSP is larger than an area of the gate electrode pad GP.

On the upper part of the semiconductor chip 14, the electrode pad SP islocated close to the first lateral surface 14 a, and the gate electrodepad GP is located close to the third lateral surface 14 c. Hence, theelectrode pad SP is located on the first lateral surface side 14 a withrespect to the gate electrode pad GP. Moreover, the gate electrode padGP is located on the third lateral surface side 14 c with respect to theelectrode pad SP. Hence, naturally, the electrode pad SP is locatedcloser to the first lateral surface 14 a than the third lateral surface14 c, and the gate electrode pad GP is arranged closer to the thirdlateral surface 14 c than the first lateral surface 14 a.

The first lead 16 extends in a single direction, and is arranged betweenthe second lead 18 and the third lead 20. When a shape of the die pad 12is rectangular, an extending direction of the first lead 16 can be alengthwise direction of the die pad 12. Examples of materials of thefirst lead 16 include a same material as a material of the die pad 12.An inner end part 161 of the first lead 16 is connected to the die pad12 in a physically integrated manner. The “connected” means that the diepad 12 and the first lead 16 are physically integrated together, and thedie pad 12 and the first lead 16 may be integrally formed from thebeginning, or the first lead 16 may be bonded with the inner end part161 of the first lead. In other words, the first lead 16 and the die pad12 just have to be formed integrally, and the first lead 16 just has tohave a shape of extending from a predetermined position of the die pad12 in a planar view. FIG. 1 illustrates a shape of the first lead 16extending from a position between the second lead 18 and the third lead20 of the die pad 12. Because the die pad 12 has conductivity, the firstlead 16 and the die pad 12 are electrically connected.

The second lead 18 extends in the same direction as the extendingdirection of the first lead 16. The inner end part (the end on the diepad side) 181 of the second lead 18 is apart from the die pad 12. Thatis, the second lead 18 is provided apart from the die pad 12, the firstlead 16 and the third lead 20. The second lead 18 is connected to thesemiconductor chip 14 by way of the plurality of first conductivemembers 24. One end of each of the first conductive members 24 isconnected to the electrode pad SP of the semiconductor chip 24, and theother end of each of the first conductive members 24 is connected to theinner end part 181 of the second lead 18. The shape of the inner endpart 181 may be a shape capable of securing a region to which theplurality of first conductive members 24 is connectable.

The third lead 20 extends in the same direction as the extendingdirection of the first lead 16, and is arranged laterally away from thefirst lead 16. The third lead 20 is arranged on the opposite side of thesecond lead 18 with respect to the first lead 16. An inner end part (anend on the die pad) 201 of the third lead 20 is apart from the die pad201. That is, the second lead 18 is provided apart from the die pad 12,the first lead 16 and the third lead 20. The third lead 20 is connectedto the semiconductor chip 14 via the second conductive member 26. Oneend of the second conductive member 26 is connected to the gateelectrode pad GP of the semiconductor chip 14, and the other end of thesecond conductive member 26 is connected to the inner end part 201 ofthe third lead 20. The shape of the inner end part 201 may ensure aregion to which the second conductive member 26 is connectable.

When the semiconductor chip 14 is a MOSFET, the first lead 16corresponds to a drain electrode terminal; the second lead 18corresponds to a source electrode terminal, and the third lead 20corresponds to a gate electrode terminal. When the semiconductor chip 14contains an IGBT, the first lead 16 corresponds to a collector electrodeterminal; the second lead 18 corresponds to an emitter electrodeterminal; and the third lead 20 corresponds to a gate electrodeterminal.

Examples of materials of the second lead 18 and the third lead 20include copper and a metal such as a copper alloy. A wire, a bindingribbon and the like are cited as examples of the first conductive member24 and the second conductive member 26. When the first conductive member24 is a wire, the diameter thereof is, for example, from 300 μm to 500μm. When the second conductive member 26 is a wire, the diameter thereofis, for example, 125 μm. Examples of materials of the first conductivemember 24 and the second conductive member 26 include metal such asaluminum, gold, and copper. The first conductive member 24 iselectrically connected to the second lead 18 and the semiconductor chip14, for example, by wire bonding using ultrasound or pressurization.Similarly, the second conductive member 26 is electrically connected tothe third lead 20 and the semiconductor chip 14 for example, by wirebonding using ultrasound or pressurization.

The die pad 12 and the semiconductor chip 14 can be sealed by a resinpart 28. FIG. 1 schematically illustrates the resin part 28 by a brokenline. The inner end parts 181, 201 of the second lead 18 and the thirdlead 20 are held by the resin part 28. Inner parts of the resin part 28of the first lead 16, the second lead 18 and the third lead 20 aregenerally known as inner lead parts and are referred to as such. Outerparts of the resin parts 28 of the first lead 16, the second lead 18 andthe third lead 20 are generally known as outer lead parts and arereferred to as such.

An approximate cuboid is cited as an example of the outer shape of theresin part 28. Examples of the material of the resin part 28 includethermoplastic resin such as polyphenylene sulfide resin (PPS resin) andliquid crystalline polymer. The resin part 28 can be formed by moldingthe die pad 12 and the semiconductor chip 14. A through hole 30concentric to the through hole 22 of the die pad 12 is formed in theresin part 28. The through hole 30 is a hole to allow a screw topenetrate therethrough when performing screw fixing similarly to thethrough hole 22.

In one embodiment, the bottom surface that is a surface opposite to thechip mounting surface 12 a of the die pad 12 can be opened. In otherwords, the bottom surface can be a surface uncovered with the resin part28. In this case, the bottom surface serves as a heat release surface.

An arrangement state of the semiconductor chip 14 relative to the diepad 12 and an interconnection state by the plurality of first conductivemembers 24 and the second conductive member 26 are described below.

The semiconductor chip 14 is arranged so that the first lateral surface14 a faces the inner end part 181 of the second lead 18 and that thesecond lateral surface 14 b faces the inner end part 201 of the thirdlead 20. That is, the semiconductor chip 14 is arranged on the die pad12 so that the first lateral surface 14 a faces the inner end part 181of the second lead 18 and that the second lateral surface 14 b faces theinner end part 201 of the third lead 20. In other words, thesemiconductor chip 14 is arranged on the die pad 12 in a state of beinginclined with respect to a virtual reference plane P (surface indicatedby a dashed-dotted line) that is orthogonal to the extending directionof the first lead 16, more exactly, in a state of the first lateralsurface 14 a inclined with respect to to virtual reference plane P. Anangle of the first lateral surface 14 a relative to the virtualreference plane P can be set while considering easiness of aninterconnection by the first conductive materials 24 and the secondconductive material 26, for example, and is set at 45 degrees, forexample. The virtual reference plane P can be a surface that isorthogonal to the pair of lateral surfaces 12 b and 12 c of the die pad12.

When seen from the thickness direction of the die pad 12, that is, in aplanar view, each of the plurality of first conductive members 24 isfamed into a straight line, and the plurality of first conductivemembers 24 are arranged parallel to each other. Moreover, the extendingdirection of each of the plurality of first conductive members 24crosses the extending direction of the second conductive member 26. Theextending direction of the first conductive members 24 and the extendingdirection of second conductive member 26 bisect each other, for example,at right angles. Here, the “right angles” have a concept containing ±5degrees relative to 90 degrees, which means a concept containing a scopeof degrees from 85 degrees to 95 degrees.

Because the first lateral surface 14 a faces the inner end part andbecause the electrode pad SP is located close to the first lateralsurface 14 a, the electrode pad SP is linearly connectable to the innerend part 181 of the second lead 18 with the plurality of firstconductive members 24, and the respective plurality of first conductivemembers 24 can be arranged parallel with each other. In other words, theplurality of parallel arranged linear first conductive members 24 canconnect the electrode pad SP to the inner end part 181 of the secondlead 18. Hence, the electrode pad SP is connectable to the inner endpart 181 of the second lead 18 with shorter first conductive members 24,and the plurality of first conductive members 24 can be arranged evenlyto the electrode pad SP.

By arranging the plurality of first conductive members 24, the currentscan be supplied uniformly to the electrode pad SP, and uniformity of thecurrent density in the semiconductor chip 14 can be achieved. Becauseeach of the plurality of the first conductive members 24 can be linearlyarranged, and because the plurality of first conductive members 24 canbe arranged parallel, the difference of the plurality of firstconductive members 24 can be reduced. Even in this regard, theuniformity of current density can be achieved.

When the plurality of straight first conductive members 24 are arrangedparallel, a number of the first conductive members 24 connecting theinner end part 181 of the second lead 18 to the electrode pad SP can bereadily increased, and more currents can be supplied to thesemiconductor chip 14. As a result, the semiconductor device 10 having agreat current capacity can be achieved. Moreover, because as seen fromthe thickness direction of the die pad 12, that is, in a planar view,the electrode pad SP can be linearly connected to the inner end part 181of the second lead 18 without twisting the first conductive members 24,mounting the first conductive members 24 is easy.

Furthermore, because the lengths of the first conductive members 24 areshort, inductance can be decreased, thereby improving a function of thesemiconductor device 10. Because the heat of the semiconductor chip 14is likely to disperse to the second lead 18 when the lengths of thefirst conductive members 24 are short, the radiation performance of thesemiconductor chip 14 improves, and an increase in temperature of thesemiconductor chip 14 can be reduced.

In the semiconductor device 10, the second lateral surface 14 b thatintersects with the first lateral surface 14 a faces the inner end part201 of the third lead 20, and the gate electrode pad GP crosses thesecond lateral surface 14 b and is located close to the third lateralsurface 14 c located opposite to the first lateral surface 14 a. In thisconfiguration, because the distance between the inner end part 201 ofthe third lead 20 and the gate electrode pad GP can be shortened, thegate electrode pad GP can be connected to the inner end part 201 of thethird lead 20 with a shorter second conductive member 26. In this case,the inductance is decreased, and the function of the semiconductordevice 10 is improved. Moreover, because the gate electrode pad GP canbe linearly connected to the inner end part 201 of the third lead 20,the second conductive member 26 can be readily mounted. Furthermore, theradiation performance improves and the increase in temperature of thesemiconductor chip 14 can be inhibited due to the short length of thesecond conductive member 26 similar to the case of first conductivemembers 24.

In the embodiment where the electrode pad SP is formed into therectangular shape as illustrated in FIG. 1, and the lengthwise directionextends from the second lateral surface 14 b toward the fourth lateralsurface 14 d (extending from the fourth lateral surface 14 d toward thesecond lateral surface 14 b), because the electrode pad SP is likely tobe readily connected to the inner end part 181 of the second lead 18using the plurality of first conductive members 24, the plurality offirst conductive members 24 is likely to be arranged more evenly. Inaddition, because a connection region of the plurality of firstconductive members 24 is more readily ensured, the electrode pad SP isreadily connected to the inner end part 181 of the second lead 18 withmore of the plurality of first conductive members 24. Hence, currentcapacity of the semiconductor device 10 can be increased.

When the semiconductor device 10 is a power semiconductor device usedfor a power source and the like, for example, a wide bandgapsemiconductor tends to be used in the semiconductor chip 14. In thesemiconductor device using the wide bandgap semiconductor, a variationof the current density is preferably decreased because the switchingspeed is fast. Moreover, the semiconductor chip 14 using the widebandgap semiconductor is operable with a great current. Thus, thesemiconductor chip 14 using the great current needs to increase a numberof the second conductive member 26 in order to cause the great currentto flow through the semiconductor chip 14 and to decrease theresistance. Hence, the configuration of the semiconductor device 10 thatcan equalize the current density and increase the number of the secondconductive members 26 is advantageous for a semiconductor device usingthe semiconductor chip 14 containing the wide bandgap semiconductor.

Second Embodiment

FIG. 2 is a planar view schematically illustrating a semiconductordevice according to a second embodiment. The semiconductor device 10Aillustrated in FIG. 2 differs from the semiconductor device 10 of thefirst embodiment in that shapes of a die pad 12, an inner end part 181of a second lead 18 and an inner end part 201 of a third lead differfrom those of the semiconductor device 10 in the first embodiment.Hence, the semiconductor device 10A is described below while focusing onthe different points.

Bevel parts 121, 122 are formed on both sides of a connection part ofthe first lead 16 in the die pad 12 included in the semiconductor device10A. The configuration of the die pad 12 illustrated in FIG. 2 can bethe same as the die pad 12 illustrated in FIG. 1 other than this point.

In the semiconductor device 10A, the inner end part 181 of the secondlead 18 is arranged to face the bevel part (first facing part) 121, andthe inner end part 201 of the third lead 20 is arranged to face thebevel part (second facing part) 122. In other words, the bevels arefamed in edges (corner parts) facing the inner end part 181 of thesecond lead 18 and the inner end part 201 of the third lead 20 in thedie pad 12.

The die pad 12 illustrated in FIG. 2 may be produced by forming thebevel while removing the edges of the die pad 12 illustrated in FIG. 1.Otherwise, the die pad 12 having a shape illustrated in FIG. 2 may bedirectly produced using a mold.

In the inner end part 181 of the second lead 18 and the bevel part 121,facing surfaces 181 a and 121 a that face each other are parallel toeach other, and in the inner end part 201 of the third lead 20 and thebevel part 122, facing surfaces 201 a and 122 a that face each other areparallel to each other.

The second lead 18 and the third lead 20 including such inner end parts181 and 201 may be produced by removing part of the inner end parts toform the bevels after the second lead and the third lead are produced soas to have rectangular inner end parts in a planar view, for example.Otherwise, the second lead 18 and the third lead 20 may be directlyproduced so as to have the inner end parts 181 and 201 having the shapeillustrated in FIG. 2.

In one embodiment, the semiconductor chip 14 is arranged so that thefirst lateral surface 14 a is parallel to the facing surface 121 aincluded in the bevel part 121. In this case, the first lateral surface14 a is also parallel to the facing surface 201 a included in the innerend part 201.

In the semiconductor device 10A, the arrangement state of thesemiconductor chip 14 is similar to the case of the first embodiment.Hence, the semiconductor device 10A has at least an operationaladvantage similar to the case of the semiconductor device 10 in thefirst embodiment.

In the semiconductor device 10A, the die pad 12 has the bevel part 121,and the facing surfaces 181 a and 121 a that face each other areparallel to each other in the inner end part 181 of the second lead 18and the bevel part 121. Thus, the electrode pad SP is connectable to theinner end part 181 of the second lead 18 with the plurality of firstconductive members 24 having an approximately uniform length. As aresult, the current density can be made further uniform in thesemiconductor chip 14. Moreover, in the configuration of the die pad 12and the second lead 18 included in the semiconductor device 10A, thedistance between the facing surface 181 a included in the inner end part181 and the facing surface 121 a included in the bevel part 121 can beshortened. In other words, the inner end part 181 can be made closer tothe bevel part 121. Hence, the distance between the inner end part 181and the electrode pad SP shortens, and the lengths of the firstconductive members 24 can be made further shorter. As a result, theradiation performance improves while the inductance can be decreased andthe function of the semiconductor device 10A improves, thereby furtherinhibiting the increase in temperature of the semiconductor chip 14.

In the embodiment where the first lateral surface 14 a is parallel tothe facing surface 121 a of the bevel part 121 of the die pad 12,because the differences of the lengths of the plurality of firstconductive members 24 can be further decreased, the uniformity of thecurrent density can be further achieved. In addition, the number of thefirst conductive members 24 can be readily increased because theconnection region of the plurality of first conductive members 24 can bereadily ensured.

In the semiconductor device 10A, the die pad 12 includes the bevel part122, and the facing surfaces 201 a and 122 a that face each other areparallel to each other in the inner end part 201 of the third lead 20and the bevel part 122. Hence, the distance between the inner end part201 and the gate electrode pad GP is further shortened. Thus, the lengthof the second conductive member 26 can be further shortened. As aresult, the inductance decreases, and the function of the semiconductordevice 10A further improves. In addition, because the radiationperformance improves, the increase in temperature of the semiconductorchip 14 can be further inhibited.

The configuration of the semiconductor device is more advantageous whenthe semiconductor chip 14 containing a wide bandgap semiconductorsimilar to the semiconductor device.

Although the embodiments have been described hereinabove, it isunderstood that the embodiments disclosed herein are illustrative andnon-restrictive in any respect. The scope of the present invention isdefined by the terms of the claims, rather than the embodimentsdescribed above, and is intended to include any modifications withoutdeparting from the scope of the present disclosure. For example, asemiconductor element is not limited to an element having a chip-likeshape. The semiconductor element is not limited to a verticaltransistor, but may be a lateral transistor. The shapes of the mainelectrode pad and the control electrode pad are not limited to arectangle. For example, at least part of the main electrode pad may belocated closer to the first lateral surface than the control electrodepad, and for example, the main electrode pad may be provided so as tosurround the control electrode pad in a state of being insulated fromthe control electrode pad. In the second embodiment, facing surfacesthat the first facing part facing the inner end part of the second leadincludes and that the inner end part of the second lead includes may beparallel to each other among the die pads.

With respect to the above embodiment, the following numbered clauses arefurther disclosed.

(Clause 1)

A semiconductor device, including

a die pad,

a semiconductor element including a main electrode pad and a controlelectrode pad, mounted on the die pad, and electrically connected to thedie pad;

a first lead integrally connected to the die pad;

a second lead arranged laterally away from the first lead; and

a third lead arranged laterally away from the first lead,

wherein the semiconductor element includes:

a first lateral surface facing an end part on the die pad side of thesecond lead;

a second lateral surface intersecting with the first lateral surface andfacing an end part on the die pad side of the third lead;

a third lateral surface located opposite to the first lateral surfaceand intersecting with the second lateral surface; and

a fourth lateral surface intersecting with the first lateral surface andthe third lateral surface,

wherein at least part of the main electrode pad is located on the firstlateral surface,

wherein the control electrode pad is located on the third lateralsurface for at least part of the main electrode pad,

wherein at least part of the main electrode pad is connected to an endpart on the die pad side of the second lead with a plurality of firstconductive members, and

wherein the control electrode pad is connected to the end part on thedie pad side of the third lead with a second conductive member.

(Clause 2)

The semiconductor device as described in clause 1,

wherein the end part on the die pad side of the second lead is linearlyconnected to the main electrode pad when seen from a thickness directionof the die pad, and

wherein the plurality of first conductive members is arranged parallelto each other.

(Clause 3)

The semiconductor device as described in clause 1 or 2, wherein anextending direction of each of the plurality of first conductive membersis orthogonal to an extending direction of the second conductive member.

DESCRIPTION OF THE REFERENCE NUMERALS

-   10, 10A semiconductor device-   12 die pad-   14 semiconductor chip (semiconductor element)-   14 a first lateral surface-   14 b second lateral surface-   14 c third lateral surface-   14 d fourth lateral surface-   16 first lead-   18 second lead-   20 third lead-   24 first conductive member-   26 second conductive member-   121 bevel part (first facing part)-   121 a facing part-   122 bevel part (second facing part)-   122 a facing surface-   181 inner end part-   181 a facing surface (181 a)-   201 inner end part-   201 a facing surface

The invention claimed is:
 1. A semiconductor device, comprising: a diepad; a first lead integrally connected to the die pad; a second leadarranged laterally away from the first lead and provided apart from thedie pad and the first lead; a third lead arranged laterally away fromthe first lead and provided apart from the die pad, the first lead andthe second lead; a semiconductor element including a first lateralsurface and a second lateral surface adjacent to each other and a thirdlateral surface located opposite to the first lateral surface andadjacent to the second lateral surface, and mounted on the die pad suchthat the first lateral surface faces an end on the die pad side of thesecond lead and that the second lateral surface faces an end on the diepad side of the third lead in a planar view; a main electrode padprovided on a surface opposite to the die pad of the semiconductorelement such that at least part of the main electrode pad is located onthe first lateral surface side; a control electrode pad provided on thesurface opposite to the die pad of the semiconductor element such thatat least part of the control electrode pad is located on the thirdlateral surface side; a plurality of first conductive memberselectrically connecting the at least part of the main electrode pad tothe end on the die pad side of the second lead; and a second conductivemember connecting the control electrode pad to the end on the die padside of the third lead.
 2. The semiconductor device as claimed in claim1, wherein the end on the die pad side of the second lead is linearlyconnected to the main electrode pad with the plurality of firstconductive members in a planar view, and wherein the plurality of firstconductive members is arranged parallel to each other.
 3. Thesemiconductor device as claimed in claim 1, wherein an extendingdirection of each of the plurality of first conductive members crossesan extending direction of the second conductive member at right angles.4. The semiconductor device as claimed in claim 1, wherein the thirdlead is arranged opposite to the second lead with respect to the firstlead, and wherein facing surfaces that a first facing part facing theend on the die pad side of the second lead in the die pad includes andthat the end on the die pad side of the second lead includes areparallel to each other.
 5. The semiconductor device as claimed in claim4, wherein facing surfaces that a second facing part facing the end onthe die pad side of the third lead in the die pad includes and the endon the die pad side of the third lead includes are parallel to eachother.
 6. The semiconductor device as claimed in claim 4, wherein thefirst lateral surface is parallel to the facing surface included in thefirst facing part.
 7. The semiconductor device as claimed in claim 1,wherein the semiconductor element further includes a fourth lateralsurface adjacent to the first lateral surface and the third lateralsurface, and wherein at least part of the main electrode pad is formedinto a rectangular shape extending from the third lateral surface to thefourth lateral surface.